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Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombination velocity, which is detrimental for nanowire devices, such as solar cells and nanowire lasers. Here, we show that, by exploiting engineered band-bending...
Semiconductor nanowires have been investigated intensively for their potential as efficient terahertz sources. Besides having perfect control on structural features such as vertical alignment and uniform distribution by fabricating the wires via e-beam lithography and etching process, we also investigated THz generation from these fabricated nanowires under bias field. To be able to apply a voltage...
In this work terahertz (THz) pulse emission of the non-vertically aligned GaAs core-shell nanowires (NWs) is investigated. THz emission azimuthal dependencies of different NW samples have been measured. It is shown that these measurements together with theoretical calculations could be a very promising method to determine the effective index of refraction (n0) of the NW ensemble. The measurement of...
We combine sub-cycle, mid-infrared spectroscopy and near-field microscopy to achieve a spatial resolution of 25 nm and a temporal resolution of 50 fs. Using our nano-FTIR technology we can spatially, temporally and spectrally resolve the femtosecond carrier-dynamics in solid state materials like photo excited InAs nanowires.
We have used optical-pump-terahertz-probe spectroscopy (OPTPS) to study a range of novel of semiconductors including III-V nanowires and metal halide perovskites. We show that OPTPs allows key figures of merit to be extracted in a non-contact manner, including charge mobility, surface recombination velocity, and doping density. Furthermore, the technique allows charge recombination dynamics to be...
THz generation under the excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz radiation generation increases due to the resonant leaky mode excitation in nanowires. The THz generation mechanisms have been identified. It is shown that the efficiency of the terahertz generation at optimum geometrical parameters of an array...
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